CYCLOTRON-IMPURITY RESONANCE IN SILICENE MONOLAYER UNDER A STATIC ELECTRIC FIELD
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1.
Duyên HT, Hiếu NN, Phương LTT. CYCLOTRON-IMPURITY RESONANCE IN SILICENE MONOLAYER UNDER A STATIC ELECTRIC FIELD. hueuni-jns [Internet]. 2018Oct.26 [cited 2024Apr.16];127(1B):135-44. Available from: http://jos.hueuni.edu.vn/index.php/hujos-ns/article/view/4993

Abstract

We investigate the cyclotron-impurity resonance through the absorption spectrum inmonolayer silicene in the presence of an electromagnetic wave and a perpendicular mag-netic field. The influence of an external static electric field is also taken into account. The nonlinear absorption coefficient (NAC) is calculatedusing the perturbation theory in the case of electron-impurity scattering. The dependence of NAC on the photon energy is con-sidered. The results show that the external static electric and magnetic field strongly affectthe resonance spectrumin monolayer silicene. When the electric field increases,the value of NAC at the resonant peaks increases.Whereas,it decreases with the increase inthe magnet-ic field. On the base ofthe Profile method, the full width at half maximum (FWHM) of the resonant peaks is obtained,and it isnearly unchanged with temperature in the low-temperature region. In addition, FWHM depends on the external electric field for both the one-and two-photon absorption process.

https://doi.org/10.26459/hueuni-jns.v127i1B.4993
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