Study on the electronic properties and carrier mobility in two-dimensional Janus material SMoGeZ₂ (Z = N, P, As) by using density functional theory
Vol. 135 No. 1A (2026), Original Article
Vol. 135 No. 1A (2026)

Study on the electronic properties and carrier mobility in two-dimensional Janus material SMoGeZ₂ (Z = N, P, As) by using density functional theory

Original Article
https://doi.org/10.26459/hueunijns.v135i1A.7936
Published 2026-03-17
Quang Nha Vo
School of Engineering and Technology, Hue University, Hue, Viet Nam
Thi Ngoc Bao Le
Faculty of Electrical, Electronics and Materials Engineering, Hue University of Sciences, Hue University, Hue, Vietnam
Thi Minh Anh Do
Faculty of Electrical, Electronics and Materials Engineering, Hue University of Sciences, Hue University, Hue, Vietnam
Quang Cuong Nguyen
Institute of Research and Development, Duy Tan University, Da Nang, Viet Nam
Vo Thi Tuyet Vi*
Faculty of Basic Sciences, University of Medicine and Pharmacy, Hue University, Hue, Viet Nam
PDF (Vietnamese)

Keywords

vật liệu hai chiều Janus
tính chất điện tử
độ linh động của hạt tải
lý thuyết phiếm hàm mật độ two-dimensional Janus materials
electronic properties
carrier mobility
density functional theory

How to Cite

1.
Võ QN, Lê TNB, Đỗ TMA, Nguyễn QC, Võ TTV. Study on the electronic properties and carrier mobility in two-dimensional Janus material SMoGeZ₂ (Z = N, P, As) by using density functional theory. hueuni-jns [Internet]. 2026Mar.17 [cited 2026May19];135(1A):59-71. Available from: https://jos.hueuni.edu.vn/index.php/hujos-ns/article/view/7936
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Abstract

The successful fabrication of asymmetric two-dimensional Janus monolayers has opened up a new potential research direction. In this paper, we use density functional theory to study the properties of Janus monolayer SMoGeZ2 (Z = N, P, As), including stability, electronic properties, mechanical properties, and carrier mobility. The results of the cohesive energy and phonon spectrum confirm that the SMoGeZ2 monolayer has a stable structure. Both PBE and HSE06 calculations show that SMoGeZ2 is a semiconductor with an indirect band gap. Additionally, this material exhibits isotropic mechanical properties and high mechanical strength. The calculation results demonstrate that the carrier mobility is anisotropic. Electron mobility ranges from 196.38 to 333.29 cm2.V−1.s−1, while hole mobility ranges from 82.39 to 312.78 cm2.V−1.s−1.

https://doi.org/10.26459/hueunijns.v135i1A.7936
PDF (Vietnamese)

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